Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced that it has begun mass producing the industry’s first 2Gb DDR3 devices using 40 nanometer (nm) class process technology. Samsung says, moving to a 40nm process technology will increase in production productivity by 60% compared to 50 nm process.

The chips will be produced in 16GB, 8GB, and 4GB RDIMMS for servers. Samsung will also produce UDIMMS (unregistered in-line memory modules) for workstations and desktop PCs along with SODIMMs (small outline dual in-line memory modules) for notebooks up to 4GB using the new chip.

The 2Gb chips are energy efficient and intended for high-density, high-performance memory applications. Each chip supports a data rate of 1.6Gbps at 1.35 volts, up to twice as fast as an 800Mbps 1Gb-based dual-die package.

According to market research firm iSuppli, 2Gb DDR3 is expected to account for 82% of the total DDR3 DRAM market in units sold by 2012, and become the mainstream DDR3 DRAM product by 2010.